Memory Chips K4B4G1646E-BYMA

The Samsung K4B4G1646E-BYMA is a high-performance 4 Gbit (512 MB) DDR3L SDRAM memory die (bare die / E-type wafer-level chip) from Samsung Semiconductor, organized as 256M words × 16 bits. This low-voltage DDR3L device operates at up to 1866 Mbps (PC3L-14900 / DDR3L-1866 speed grade, tCK ≈ 1.07 ns) and is supplied as bare die in tray packaging, ideal for module manufacturers, SiP (System-in-Package), MCM (Multi-Chip Module), and space-constrained embedded designs.

Key Specifications:

• Brand: Samsung Semiconductor
• Part Number: K4B4G1646E-BYMA
• Capacity: 4 Gbit (256M × 16)
• Type: DDR3L SDRAM (1.35 V low-voltage, backward compatible with 1.5 V DDR3)
• Data Rate: 1866 Mbps
• Clock Frequency: 933 MHz
• Organization: 256M × 16
• Supply Voltage: 1.28 V to 1.45 V (1.35 V nominal)
• Package: FBGA-96 bare die (7.5 × 13.3 mm die size)
• Packaging: Tray (bare die)
• Operating Temperature Range: –40 °C to +95 °C (Industrial / Extended Commercial, Tc)

This Samsung DDR3L bare die offers excellent power efficiency, high bandwidth, and proven reliability in a compact form factor, making it well suited for industrial automation, networking equipment, embedded computing, IoT modules, automotive infotainment, medical devices, and other applications requiring moderate-density, low-power DDR3 memory with wide temperature operation and direct die-level integration.

A cost-effective and long-lifecycle memory solution optimized for advanced packaging technologies and designs needing industrial-grade temperature range without the overhead of a fully packaged component.