MT41K256M16TW-107_Memory Chips

The **Micron MT41K256M16TW-107:P** is a high-performance 4 Gbit (512 MB) DDR3L SDRAM memory device from Micron Technology, organized as 256M × 16 (also supporting x4 and x8 configurations via bonding options). This low-voltage (1.35 V nominal) DDR3L chip operates at up to 1866 Mbps (PC3L-14900 / DDR3L-1866 speed grade) and is housed in a compact 96-ball FBGA package.

**Key Specifications:**
– Brand: Micron
– Part Number: MT41K256M16TW-107:P
– Capacity: 4 Gbit (256M × 16)
– Type: DDR3L SDRAM (1.35 V low-voltage version, backward compatible with 1.5 V DDR3)
– Data Rate: 1866 Mbps (tCK = 1.071 ns)
– Supply Voltage: 1.283 V to 1.45 V (1.35 V nominal)
– Organization: 256M × 16 (x4 / x8 / x16 configurable)
– Active current: 32 mA (typ.)
– Refresh current: 15 mA (typ.)
– Package: 96-ball FBGA (8 × 14 mm)
– Packaging: Tape & Reel
– Operating Temperature Range: 0 °C to +95 °C (Commercial / Extended Commercial, Tc)

This DDR3L device offers excellent power efficiency, high bandwidth, and reliable performance for embedded systems, industrial control, networking, consumer electronics, set-top boxes, routers, IoT devices, and other applications requiring cost-effective, low-power DDR3 memory with standard commercial temperature operation.

Ideal for designs transitioning from standard DDR3 to lower-voltage DDR3L while maintaining broad compatibility and compact footprint.